Mitsubishi Electric Corporation has introduced a distributed feedback
laser diode (DFB-LD) dubbed the ML7xx42 and the PD8xx24 avalanche
photodiode (APD). Both new devices have been designed specifically for
use in optical network units (ONU) of symmetric 10 gigabit Ethernet
passive optical networks (10G-EPON).
The new distributed feedback laser diode ML7xx42 incorporates an
AlGaInAs active layer providing 10mW of output power under low
operating current even in high-temperature conditions. Due to an
improved modulation bandwidth it is able to perform smoothly at 10Gbps.
The DFB-LD is housed in a TO-CAN package with a diameter of 4.8mm and
equipped with an aspherical lens cap providing a high coupling
efficiency. ML7xx42 has its light emission peak at a wavelength of
1,270nm while the output power is 10mW at operating currents of less
than 70mA. It is designed for the operating temperature range from -5
to +75°C.
Mitsubishi Electric utilizes AlInAs for the multiplication layer of the
new low-noise avalanche photodiode which provides an industry leading
sensitivity of typically 31.5dBm. Packaged in a 5.4mm TO-CAN with a
ball lens cap, the PD8xx24 operates in the 1,570nm wavelength band and
has an APD responsivity of typically 0.8A/W, together with a bandwidth
of typically 6.5GHz.
More information at
www.mitsubishichips.eu/
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